Design of a Near-Perfect Anti Reflective Layer for Si Photodetectors Based on a SiO2 Film Embedded with Si Nanocrystals
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概要
- 論文の詳細を見る
An anti reflective layer for Si photodetectors working at various wavelengths is designed based on a SiO2 film containing Si nanocrystals (nc-Si). It is shown that with a proper amount of nc-Si distributed in the oxide and at the right thickness of the film, a single layer of nc-Si/SiO2 film can serve as a perfect anti reflection coating with very low or insignificant light loss. For example, for a 110 nm layer with an nc-Si volume fraction of 34%, the reflectance and the transmittance at the wavelength of 850 nm can reach 0.008 and 99.99%, respectively.
- 2009-06-25
著者
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Liu Yang
School Of Electrical And Electronic Engineering Nanyang Technological University
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Chen Tu
School Of Electrical And Electronic Engineering Nanyang Technological University
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Sun Chang
School Of Electrical And Electronic Engineering Nanyang Technological University
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Ding Liang
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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Chen Tu
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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Goh Eunice
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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