Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors
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概要
著者
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Liu Yang
School Of Electrical And Electronic Engineering Nanyang Technological University
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Yang Fan
School Of Computer Science And Engineering University Of Electronic Science And Technology Of China
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Yao Yao
School Of Traditional Chinese Materia Medica Shenyang Pharmaceutical University
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He Zhiyuan
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Li Jialin
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Wen Yuhua
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Shen Zhen
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Ni Yiqiang
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Wu Zhisheng
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Zhang Baijun
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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