Influence of Nitrogen Proximity from the Si/SiO_2 Interface on Negative Bias Temperature Instability
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-10-01
著者
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CHEN Tu
School of Electrical and Electronic Engineering, Nanyang Technological University
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ANG Chew
Department of Electrical and Computer Engineering, National University of Singapore
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Ang Chew
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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Ang Chew
Department Of Electrical And Computer Engineering National University Of Singapore
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Chen Tu
School Of Electrical And Electronic Engineering Nanyang Technological University
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Tan Shyue
School Of Electrical And Electronic Engineering Nanyang Technological University
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Tan Yun
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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Chan Lap
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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Chen Tu
United Microelectronics Corporation (umc) Central R&d Division
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Chan Lap
Department Of Diagnostic Radiology Kwong Wah Hospital
関連論文
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- Power-LaW Dependence of Charge Trapping on Injected Charge in Very Thin SiO_2 Films : Semiconductors
- Reliability of Thin Gate Oxides Irradiated under X-Ray Lithography Conditions
- Gate Oxide Reliability Concern Associated with X-Ray Lithography
- Influences of Nitridation on Barrier Height Change Caused by Electrical Stress : Semiconductors
- Influence of Nitrogen Proximity from the Si/SiO_2 Interface on Negative Bias Temperature Instability
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- Design of a Near-Perfect Anti Reflective Layer for Si Photodetectors Based on a SiO2 Film Embedded with Si Nanocrystals
- Reliability of Thin Gate Oxides Irradiated under X-Ray Lithography Conditions
- Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy
- Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy