Calculation of Sputtering Rate during a Plasma-Assisted Process

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概要

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• An attempt was made to calculate the sputtering rate of a cathode during a plasma-assisted deposition or etching process. In this attempt, an approach combining sputtering models and Monte Carlo simulation was developed. By using a Cr target as an example, the approach was shown to be satisfactory.

• 2003-08-15

著者

• HSIEH Jang-Hsing

  School of Mechanical and Production Engineering, Nanyang Technological University

• Li Chuan

  School Of Mechanical And Production Engineering Nanyang Technological University

• Hsieh Jang-Hsing

  School of MPE, Nanyang Technological University, 639798, Singapore

関連論文

• Depth Profiling of Si Oxidation States in Si-Implanted SiO_2 Films by X-Ray Photoelectron Spectroscopy
• Management of parallel-manipulator singularities using joint-coupling
• Calculation of Sputtering Rate during a Plasma-Assisted Process
• Parameters and Stability Analysis of Reactive Sputtering
• Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy

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