LiNbO_3 のプラズマによるドライエッチング特性

概要

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As the microfabrication technique of LiNbO3 that utilized electric field sensor, the wet etching by fluorine acid solution and the dry etching by plasma have been used. However, etching condition and etching profile need to be examined in detail. We have studied a plasma etching characteristic of LiNbO3. The etch rate of LiNbO3 increases drastically by interaction of physical and chemical etching. The maximum etch rate was 31.8nm/min for 60% Ar in CF4+Ar plasma and 29.6nm/min for 37% H2 in NF3+H2 plasma. This etch rate increases by 3 times in comparison with that in CF4 only plasma and 10 times in comparison with that in fluorine acid solution (10%). The analytical results by XPS show that LiNbO3 absorbs F radical and forms the mixing layer in the surface and the etch rate of LiNbO3 increases by the ion bombardment effect. It is found out that Ni metal is adequate as the mask material. The Ridge type optical waveguide with the height of 3μm could be formed.
社団法人電気学会の論文
1998-09-01