Development of Sub-Quarter-μm MONOS (metal/oxide/nitride/oxide/semiconductor)Type Memory Transistor
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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Nakamura A
Faculty Of Pharmacy And Parmaceutical Sciences Fukuyama University
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Narai Akira
Faculty Of Engineering Hiroshima University
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Nakamura A
Graduate School Of Science And Engineering Waseda University
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Bohm Thomas
Advanced Devices Department Ulsi R&d Laboratories Semiconductor Company Sony Corporation
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Komatsu Y
Functional Devices Research Laboratories Nec Corporation
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NAKAMURA Akihiro
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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AOZASA Hiroshi
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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YAMAGISHI Machio
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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KOMATSU Yasutoshi
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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Aozasa H
Sony Corp. Kanagawa Jpn
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Aozasa Hiroshi
Advanced Device R & D Department Semiconductor Technology Development Group Sony Corporation Mic
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Böhm Thomas
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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Yamagishi Machio
Advanced Devices Department Ulsi R&d Laboratories Semiconductor Company Sony Corporation
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