Aozasa Hiroshi | Advanced Device R & D Department Semiconductor Technology Development Group Sony Corporation Mic
スポンサーリンク
概要
- 同名の論文著者
- Advanced Device R & D Department Semiconductor Technology Development Group Sony Corporation Micの論文著者
関連著者
-
Aozasa Hiroshi
Advanced Device R & D Department Semiconductor Technology Development Group Sony Corporation Mic
-
Nakamura A
Faculty Of Pharmacy And Parmaceutical Sciences Fukuyama University
-
Narai Akira
Faculty Of Engineering Hiroshima University
-
Nakamura A
Graduate School Of Science And Engineering Waseda University
-
Bohm Thomas
Advanced Devices Department Ulsi R&d Laboratories Semiconductor Company Sony Corporation
-
Komatsu Y
Functional Devices Research Laboratories Nec Corporation
-
NAKAMURA Akihiro
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
-
AOZASA Hiroshi
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
-
YAMAGISHI Machio
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
-
KOMATSU Yasutoshi
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
-
Aozasa H
Sony Corp. Kanagawa Jpn
-
Yamagishi Machio
Advanced Devices Department Ulsi R&d Laboratories Semiconductor Company Sony Corporation
-
Imanaga Syunji
Advanced Device R & D Department Semiconductor Technology Development Group Sony Corporation Mic
-
Böhm Thomas
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
-
Aozasa Hiroshi
Advanced Device R & D Department Semiconductor Technology Development Group SONY Corporation Micro System Network Company, Atsugi Tec. 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan
-
Imanaga Syunji
Advanced Device R & D Department Semiconductor Technology Development Group SONY Corporation Micro System Network Company, Atsugi Tec. 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan
著作論文
- Development of Sub-Quarter-μm MONOS (metal/oxide/nitride/oxide/semiconductor)Type Memory Transistor
- Development of Sub-Quarter-μm MONOS Type Memory Transistor
- Modeling of Nonvolatile Memory Operation of Polysilicon–Oxide–Nitride–Oxide–Semiconductor and Analysis of Program Characteristics Dependent on the Trap Distribution in the Silicon–Nitride Layer