Aozasa H | Sony Corp. Kanagawa Jpn
スポンサーリンク
概要
関連著者
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Nakamura A
Faculty Of Pharmacy And Parmaceutical Sciences Fukuyama University
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Narai Akira
Faculty Of Engineering Hiroshima University
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Nakamura A
Graduate School Of Science And Engineering Waseda University
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Komatsu Y
Functional Devices Research Laboratories Nec Corporation
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Aozasa H
Sony Corp. Kanagawa Jpn
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FUJIWARA Ichiro
Institute of Atomic Energy,Kyoto University
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Fujiwara Ichiro
Ulsi R&d Laboratories Lsi Business & Technology Development Group Cnc Sony Corporation
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Fujiwara I
Sony Corp. Res. Center Yokohama Jpn
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Bohm Thomas
Advanced Devices Department Ulsi R&d Laboratories Semiconductor Company Sony Corporation
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AOZASA Hiroshi
ULSI R&D Laboratories, LSI Business & Technology Development Group CNC, Sony Corporation
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NAKAMURA Akihiro
ULSI R&D Laboratories, LSI Business & Technology Development Group CNC, Sony Corporation
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KOMATSU Yasutoshi
ULSI R&D Laboratories, LSI Business & Technology Development Group CNC, Sony Corporation
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NAKAMURA Akihiro
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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AOZASA Hiroshi
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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YAMAGISHI Machio
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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KOMATSU Yasutoshi
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
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Aozasa Hiroshi
Advanced Device R & D Department Semiconductor Technology Development Group Sony Corporation Mic
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Nakamura Akihiro
Ulsi R&d Laboratories Lsi Business & Technology Development Group Cnc Sony Corporation
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Aozasa Hiroshi
Ulsi R&d Laboratories Lsi Business & Technology Development Group Cnc Sony Corporation
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Yamagishi Machio
Advanced Devices Department Ulsi R&d Laboratories Semiconductor Company Sony Corporation
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HAYASHI Yutaka
University of Tsukuba
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Böhm Thomas
Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation
著作論文
- 0.13μm Metal-Oxide-Nitride-Oxide-Semiconductor Single Transistor Memory Cell with Separated Source Line
- Analysis of Carrier Traps in Si_3N_4N_4 in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory
- Development of Sub-Quarter-μm MONOS (metal/oxide/nitride/oxide/semiconductor)Type Memory Transistor
- Development of Sub-Quarter-μm MONOS Type Memory Transistor