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Yokohama Research And Development Laboratories Furukawa Electric Co.ltd. | 論文
- Refractive Index Variation in GaInAsP/InP Quantum Confined Structures Grown by Chemical Beam Epitaxy
- Transverse Mode Control and Reduction of Thermal Resistance in 850nm Oxide Confined VCSELs(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity
- InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
- GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
- GaInAsP/InP Surface Emitting Lasers Grown by Chemical Beam Epitaxy and Wavelength Tuning Using an External Reflector
- An Optical Absorption Property of Highiy Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy
- Beryllium Doping for Ga_In_As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)
- Room-Temperature Observation of Excitonic Absorption in Ga_xIn_As/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy
- GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy
- Highly Beryllium-Doped GaInAs Grown by Chemical Beam Epitaxy
- Cracking Yield Dependence of InP Growth by Chemical Beam Epitaxy
- Growth of Ga_In_As/InP Double-Heterostructure Wafers by Chemical Beam Epitaxy (CBE)