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ULSI Research Center, TOSHIBA Corporation | 論文
- Electron Beam Calibration Method for Character Projection Exposure System EX-8D
- Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D
- Effects of Pixel Electrode Structure on Image Lag of STACK-CCD Image Sensor
- Composition Effect on CV Profile and Threshold Voltage for MESFETs Fabricated in Undoped LEC SI GaAs
- Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
- The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane : X-Ray Lithography
- The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane
- Strain Evaluation at Si/Si0_2 Interface Using the Electroreflectance Method
- Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern Formation : Lithography Technology
- Main-Field Stitching Accuracy Analysis in Electron Beam Writing Systems
- Effect of Coherence Factor σ and Shifter Arrangement for the Levenson-Type Phase-Shifting Mask
- Influence of Al Surface Modification on Selectivity in Via-Hole Etching Employing CHF_3 Plasma
- A Soft X-Ray Microscope Using an Imaging Detector
- A 250 mV Bit-Line Swing Scheme for 1-V Operating Gigabit Scale DRAMs (Special Issue on Low-Power LSI Technologies)
- High-Speed Electron Beam Data Conversion System Combining Hierarchical Operation with Parallel Processing
- Shape Data Operations for VSB EB Data Conversion Using CAD Tools : Lithography Technology
- Hot Electron Injection Characteristics in Asymmetrically Structured Submicron MOSFETs
- An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
- NAND-Structured DRAM Cell with Lithography-Oriented Design (Special Issue on ULSI Memory Technology)
- NAND-Structured Trench Capacitor Cell Technologies for 256 Mb DRAM and Beyond