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ULSI Device Development Laboratory, NEC Corporation | 論文
- Time-Dependent Leakage Current Behavior of Integrated Ba_Sr_TiO_3 Thin Film Capacitors during Stressing
- Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
- Si LSI Process Technology for Integrating Ferroelectric Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Photoacid Structure Effects on Environmental Stability of 193 nm Chemically Amplified Positive Resists
- Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy
- Effect of Low-Dose Ion Implantation on the Stress of Low-Pressure Chemical Vapor Deposited Silicon Nitride Films
- Critical Dimension Controllability Evaluation Based on Process Error Distribution for 150 nm Devices
- Influence of Gate Oxide Quality on Plasma Process-Induced Charging Damage in Ultra Thin Gate Oxide
- Stress Elimination of LPCVD Silicon Nitride Films by Low-Dose Ion Implantation
- Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
- Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation
- Effects of Field Edge Steps on Electrical Gate Linewidth Measurements (Special Issue on Microelectronic Test Structure)
- Silicide-Extension Technology for High-Density Embedded SRAM Cells in 0.18um-CMOS Generation and Beyond
- Electrical Properties of (Ba, Sr)TiO3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing