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ULSI Device Development Laboratories, NEC Corporation | 論文
- Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
- Recent Progress in Electron-Beam Cell Projection Techology
- Coulomb Interaction Effect in Cell Projection Lithography
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (Special Issue on Microwave and Millimeterwave High-power Devices)
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction : Electron Beam Lithography
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction
- Representative Figure Method for Proximity Effect Correction [II]
- Representative Figure Method for Proximity Effect Correction
- The Most Essential Factor for High-Speed, Low-Power 0.35 μm Complementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen (SIMOX) Substrates
- Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Photonic Integrated Circuits Fabricated by Bandgap-Energy-Controlled Selective MOVPE Technique
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- A 0.7-μm-Pitch Double Level Al Interconnection Technology for 1-Gbit DRAMs using SiO_2 Mask Al Etching and Plasma Enhanced Chemical Vapor Deposition SiOF