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Toshiba Central Research Laboratory | 論文
- High-Efficiency GaP Green LED's with Double n-LPE Layers
- Tungsten Photochemical Vapor Deposition Mechanism in WF_6+H_2 System : II. Gas-Molecule Adspecies Collision Model
- Tungsten Photochemical Vapor Deposition Mechanism in WF_6+H_2 System : I. Adspecies Excitation Model
- Continuous Oscillations of Acoustoelectric Current in CdS
- Least Squares Analysis of Hall Data and Donor Levels in Gallium Phosphide
- Growth and Properties of GaAs_xP_ Liquid-Phase Epitaxial Layers Grown on GaP
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : II. Effect of Substrate Orientation
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
- A New Nonlinear Optic Crystal Ba_2LiNb_5O_ Having no Microtwinning
- The Linear Electro-Optic Effect of (Ba_Sr_x)_2NaNb_5O_ Cry_Crystals
- GaP Green Light-Emitting Diodes with p-n-p-n Structure
- Localization of Electrons in Certain Random Lattices
- Numerical Study of Localization in Disordered Systems with ρ-like Atomic States
- Impurity Band Conduction with Strong Electron Correlations
- Statistical Origin of the Meyer-Neldel Rule in Amorphous Semiconductor Thin Film Transistors
- Localization of Electrons in Structurally Disordered Lattices
- Electronic States of Ionized Impurity-Pairs in Silicon
- Numerical Studies of Localization in Structurally Disordered Systems
- Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions