Statistical Origin of the Meyer-Neldel Rule in Amorphous Semiconductor Thin Film Transistors

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概要

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• The origin of the Meyer-Neldel (MN) rule [G_0∝exp (AE_σ)] in the dc conductance of amorphous semiconductor thin-film transistors (TFT) is investigated based on the statistical model. We analyzed the temperature derivative of the band bending energy eV_s(T) at the semiconductor interface as a function of V_s. It is shown that the condition for the validity of the rule, i.e., the linearity of the derivative deV_s/dkT to V_s, certainly holds as a natural consequence of the interplay between the steep tail states and the low gap density of states spectrum. An expression is derived which relates the parameter A in the rule to the gap states spectrum. Model calculations show a magnitude of A in fair agreement with the experimental observations. The effects of the Fermi level position and the magnitude of the midgap density of states are also discussed.

• 社団法人応用物理学会の論文
• 1990-09-20

著者

• Kikuchi Minoru

  Toshiba Corporation Research And Development Center

• Kikuchi Minoru

  Toshiba Central Research Laboratory

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