Electronic States of Ionized Impurity-Pairs in Silicon
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概要
- 論文の詳細を見る
With the help of the effective mass theoretical approaches, energy levels are calculated for ionized homopolar pairs of impurities in n-type and p-type silicon under magnetic and stress fields. Two impurity ions which constitute the pair are assumed to lie along the (001) directions of the crystal. The microwave double resonance experiment recently performed by Tanaka et al. is analyzed with the use of the obtained level schemes. Brief discussions on transition probabilities and relaxation times are added.
- 社団法人日本物理学会の論文
- 1967-01-05
著者
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Kikuchi Minoru
Toshiba Corporation Research And Development Center
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Kikuchi Minoru
Toshiba Central Research Laboratory
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Okazaki Makoto
Department Of Applied Physics University Of Tokyo
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Okazaki Makoto
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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TAKEYAMA Kyozo
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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KAWAHITO Masayuki
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Takeyama Kyozo
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Kawahito Masayuki
Department Of Applied Physics Faculty Of Engineering University Of Tokyo:(present)department Of Nucl
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Okazaki Makoto
Department Of Applied Physics Department Of Physics University Of Tokyo
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