Impurity Band Conduction with Strong Electron Correlations

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概要

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• The effects of strong electron correlations on impurity band cunduction in semiconductors are investigated following Hubbard's method. The random nature of the system is taken into account by adopting the level density spectrum calculated by Matsubara and Toyozawa for the case with no correlation. It is found that the impurity concentration dependence of the band gap caused by correlations has a remarkable similarity to the behaviour of the activation energy ε_2 observed in the resistivity vs temperature curve at the intermediate concentration range. The dynamical damping effects due to the spacial and temporal density fluctuations of the correlating eletrons are shown to be important for the band broadening in the higher concentration regions. The calculated results strongly suggest an important role of electron correlations in the mechanism which gives rise to the activation energy ε_2.

• 社団法人日本物理学会の論文
• 1968-10-05

著者

• Kikuchi Minoru

  Toshiba Corporation Research And Development Center

• Kikuchi Minoru

  Toshiba Central Research Laboratory

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