Localization of Electrons in Structurally Disordered Lattices

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概要

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• The localization of electrons in structurally disordered lattice is investigated by following Anderson's probabilistic approach. Based on the cell model, the strong dispersion of transfer energy due to fluctuations in the interatomic distance is transformed into the fluctuations in the molecular ievels of the cells. The energy dependence of the critical value W/V for the electron localization is studied in the low energy tail in the spectrum of a cell system, with average intercell trensfer energy V, by considering the distribution with width W of energies of only lowest bonding states of molecules. The critical valus is found to decrease drastically with the decrease of distribution function of molecular levels. This behavior will confirm the conjecture that, in doped senmiconductors, the electronic states are strongly localized in the tail of the impurity band or in the tailing region of the main band in heavily doped systems.

• 社団法人日本物理学会の論文
• 1972-08-05

著者

• Kikuchi Minoru

  Toshiba Corporation Research And Development Center

• Kikuchi Minoru

  Toshiba Central Research Laboratory

関連論文

• Localization of Electrons in Certain Random Lattices
• Numerical Study of Localization in Disordered Systems with ρ-like Atomic States
• Impurity Band Conduction with Strong Electron Correlations
• Statistical Origin of the Meyer-Neldel Rule in Amorphous Semiconductor Thin Film Transistors
• Localization of Electrons in Structurally Disordered Lattices
• Electronic States of Ionized Impurity-Pairs in Silicon
• Numerical Studies of Localization in Structurally Disordered Systems
• R,R' and B Absorption Linewidths and Phonon-Induced Relaxations in Ruby

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