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Toshiba Central Research Laboratory | 論文
- Effect of Heat Treatment on Gallium Arsenide Crystals : III. Electrical Properties of Thermally Converted p-Type Crystals
- Effect of Heat Treatment on Gallium Arsenide Crystals : II. Properties of Crystals Heat-Treated in Chalcogen Vapor
- Kinetics of Zn-O Complex Formation in GaP Crystal
- Effective-Mass Theoretical Approach to Optical and Microwave Phenomena in Semiconductors I. Zeeman Effect of Acceptors in Si and Ge
- Epitaxial GaAs Hall Generators for High Temperature Applications : B-5: SENSING DEVICES
- Acceptors and the Edge Emissions in CdS and ZnSe
- Preparation and Magnetic Properties of a New Selenide Spinel Cu_In_Cr_2Se_4
- Effect of a Transverse dc Biasing Field on the Longitudinal M-H Loops along an Easy Axis for Biaxial Magnetic Thin Films
- Electron Traps in n-GaAs Revealed by High-Temperature Hall Measurements
- Anisotropy of DC and High-Frequency Resistivity of Hexagonal Ferrite Zn_2Y
- Piezoelectric Properties of Ferroelectric K_3Li_2(Ta_xNb_)_5O_ Single Crystals
- Notes on Compressible Gasket and Bridgman-Anvil Type High Pressure Apparatus
- Characteristics of Link-Type Cubic Anvil, High Pressure-High Temperature Apparatus
- Relationship between Carrier and Impurity Concentrations in Vapor-Epitaxial n-GaAs Crystals
- Behaviors and Doping Kinetics of Residual Impurities in Epitaxial n-GaAs Layers
- A Simple Method of Selecting the Materials for Compressible Gasket
- New Catalysts for Synthesis of Diamond
- Current Instabilities in n-GaAs
- Nonuniform Eloctric Field Distribution in GaAs
- Non-Ohmic Properties in n-Type InSb