Relationship between Carrier and Impurity Concentrations in Vapor-Epitaxial n-GaAs Crystals

スポンサーリンク

概要

• 論文の詳細を見る

• The relationship between the room-temperature carrier concentration n_0 and the total impurity concentration N_I is investigated in order to obtain some information on the natures of the residual impurities and the native crystal defects in epitaxial n-GaAs layers grown by the Ga/ASCl_3/H_2 method. The n_0 vs N_I curves observed are compared with that calculated from the Rytova-Fistul' theory which considers thermo-dynamically the amphoteric impurity distribution in compound semiconductors. Both are in good agreement if some unknown parameters are reasonably adjusted. Preliminary check is also made on the effect of the arsenic partial pressure on the values of these parameters. From these results it is supposed that the electrically-active centers in epitaxial n-GaAs layers mainly come from amphoteric impurities and the arsenic vacancies also play a significant role as compensating acceptors.

• 社団法人応用物理学会の論文
• 1972-03-05

著者

• Ikoma Hideaki

  Toshiba Central Research Laboratory

• Nakagawa Masashi

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.

関連論文

• Effect of Heat Treatment on Gallium Arsenide Crystals : III. Electrical Properties of Thermally Converted p-Type Crystals
• Effect of Heat Treatment on Gallium Arsenide Crystals : II. Properties of Crystals Heat-Treated in Chalcogen Vapor
• Electron Traps in n-GaAs Revealed by High-Temperature Hall Measurements
• Relationship between Carrier and Impurity Concentrations in Vapor-Epitaxial n-GaAs Crystals
• Behaviors and Doping Kinetics of Residual Impurities in Epitaxial n-GaAs Layers
• Nonuniform Eloctric Field Distribution in GaAs
• Non-Ohmic Properties in n-Type InSb
• Conduction-Band Tailing in GaAs

スポンサーリンク