Electron Traps in n-GaAs Revealed by High-Temperature Hall Measurements

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1969-08-05

著者

• Wang Shing-shing

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.

• IKOMA Hideaki

  Toshiba Research and Development Center, Tokyo Shibaura, Electric Co., Ltd.

• Ikoma Hideaki

  Toshiba Central Research Laboratory

関連論文

• Effect of Heat Treatment on Gallium Arsenide Crystals : III. Electrical Properties of Thermally Converted p-Type Crystals
• Effect of Heat Treatment on Gallium Arsenide Crystals : II. Properties of Crystals Heat-Treated in Chalcogen Vapor
• Electron Traps in n-GaAs Revealed by High-Temperature Hall Measurements
• Relationship between Carrier and Impurity Concentrations in Vapor-Epitaxial n-GaAs Crystals
• Behaviors and Doping Kinetics of Residual Impurities in Epitaxial n-GaAs Layers
• Nonuniform Eloctric Field Distribution in GaAs
• Non-Ohmic Properties in n-Type InSb
• Conduction-Band Tailing in GaAs

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