Non-Ohmic Properties in n-Type InSb
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概要
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Contrary to earlier views, it was disclosed that (1) the donor band distinctively exists below the conduction band even in absence of magnetic field, and, at T ≦ 4.2°K, most electrons are in the donor band in thermal equilibrium but are abruptly ionized to the conduction band by an electric field within 0.1v/cm, while (2) the non-linear quantum-limit effect, predicted by Kazarinov and Skobov, explicity occurs at electric fields higher than 〜1v/cm and is replaced by the classical-limit effect after showing a resistivity minimum at 〜40v/cm. These new conclusions are based on extensive measurements of resistivity and Hall coefficient by null method for n-InSb with N_p- N_A〜1 × 10^<14>cm^<-3> as a function of electric field up to 200v/cm with and without a transverse magnetic field below 12k-gauss between 1.8 and 77°K. Effects of magnetic field and temperature on the carrier concentration in the conduction band and the mobility in the donor band are also described.
- 社団法人日本物理学会の論文
- 1967-08-05
著者
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Ikoma Hideaki
Toshiba Central Research Laboratory
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Miyazawa Hisao
Toshiba Central Research Laboratory
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- Relationship between Carrier and Impurity Concentrations in Vapor-Epitaxial n-GaAs Crystals
- Behaviors and Doping Kinetics of Residual Impurities in Epitaxial n-GaAs Layers
- Nonuniform Eloctric Field Distribution in GaAs
- Non-Ohmic Properties in n-Type InSb
- Conduction-Band Tailing in GaAs