Nonuniform Eloctric Field Distribution in GaAs
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1964-12-05
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関連論文
- Effect of Heat Treatment on Gallium Arsenide Crystals : III. Electrical Properties of Thermally Converted p-Type Crystals
- Effect of Heat Treatment on Gallium Arsenide Crystals : II. Properties of Crystals Heat-Treated in Chalcogen Vapor
- Electron Traps in n-GaAs Revealed by High-Temperature Hall Measurements
- Relationship between Carrier and Impurity Concentrations in Vapor-Epitaxial n-GaAs Crystals
- Behaviors and Doping Kinetics of Residual Impurities in Epitaxial n-GaAs Layers
- Nonuniform Eloctric Field Distribution in GaAs
- Non-Ohmic Properties in n-Type InSb
- Conduction-Band Tailing in GaAs