Behaviors and Doping Kinetics of Residual Impurities in Epitaxial n-GaAs Layers

概要

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Electrical properties are measured at 300゜K and 77゜K of epitaxial n-GaAs layers grown by the Ga/AsCl_3/H_2 method under various growth conditions. To investigate doping behaviors of main residual impurities, donor and acceptor concentrations N_D and N_A are calculated as a function of the growth temperature and substrate orientation ((100), (110), (311) A and (111) B). For each orientation, the compensation ratio K(≡N_A/N_D) is found to be nearly constant and K is increased as the arsenic partial pressure is decreased, both suggesting that amphoteric impurities (probably Si) are main donors and acceptors. Reaction kinetics are developed based on a simple model of amphoteric impurity doping and compared with experiment. Deviations of K from the constant value and some other possible effects are also discussed.
社団法人応用物理学会の論文
1971-10-05