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Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan | 論文
- Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method
- Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method
- Defect Reduction in Polycrystalline Silicon Thin Films at 150 °C
- Effect of Self-Assembled Monolayer Modification on Indium–Tin Oxide Surface for Surface-Initiated Vapor Deposition Polymerization of Carbazole Thin Films
- Current-Induced Spectrum Change of Phosphorescent Organic Light-Emitting Diode Constructed with Vinyl Compounds
- Phosphorescent Organic Light Emitting Diode Using Vinyl Derivatives of Hole Transport and Dopant Materials
- Interface Control by Surface-Initiated Deposition Polymerization and Its Application to Organic Light-Emitting Devices
- Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
- Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
- Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment
- Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement
- Improvement in SiO2 Film Properties Formed by Sputtering Method at 150 °C
- Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
- Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing
- Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects at Cut Edges and Bear Surfaces of Crystalline Silicon
- Forward Transfer of Thin-Film Devices to Flexible Substrates by Applying Thermal Stress
- Germanium Oxide Layers Used for Forward Transfer of Electrical Circuits to Foreign Plastic Substrates