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Tohoku University of Art and Design | 論文
- Passivation Properties of Plasma CVD AlN Films for GaAs
- Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
- Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
- Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
- Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
- Eilenberger Equations in trans-Polyacetylene with Random Disorder
- Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl_3 and AsH_3 System : Condensed Matter
- In Situ Observation of Atomic Layer Epitaxy of GaAs Using GaCl_3 by Surface Photo-Absorption Method
- Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl_3
- Epitaxial Growth of GaAs at One to Two Monolayers per Cycle by Alternate Supply of GaCl_3 and AsH_3
- Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament
- Quantum Effect upon Friction of a Soliton in One-Dimensional φ^4 System