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Tohoku University of Art and Design | 論文
- Optical Properties of Halogen-Bridged Mixed-Valance Complexes,[M (en)_2][PtX_2(en)_2](ClO_4)_4,(M=Pt,Pd and Ni;X=Cl,Br and I): Effects of Metal-Alternation
- Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
- Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
- Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
- Preferential PtSi Formation in Thermal Reaction between Pt and Si_Ge_ MBE Layers
- Reduction of the Barrier Height of Silicide/p-Si_Ge_x Contact for Application in an Infrared Image Sensor
- Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
- Incoherent Neutron Scattering from Single Crystal RbHSO_4
- Incoherent Neutron Scattering from Ferroelectric RbHSO_4
- Soliton Diffusion : Present Status and Future Problems
- Eilenberger Equations in One Dimensional Peierls Systems with Fractional Charge
- Brownian-Like Motion of a One-Dimensional φ^4 Kink and Fluctuation-Dissipation Theorem
- Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
- Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
- Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
- Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
- Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
- Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
- Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
- Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films