スポンサーリンク
Tohoku University of Art and Design | 論文
- Phonons around a Soliton in trans-(CH)_x-Dependence on the Electron Momentum Cut-Off-
- Linear Mode Analysis around a Polaron in trans-Polyacetylene (CH)_x
- Linear Mode Analysis Around a Soliton in Trans-polyacetylene (CH)_x
- Brownian Motion of a Soliton in Trans-Polyacetylene.II.Friction Mechanism
- Brownian Motion of a Soliton in trans-Polyacetylene.I.Random Walk Mechanism
- Soliton-Phonon Interactions in trans-Polyacetylene
- M-10 An Adaptive Scheduling Algorithm for On-Demand Video Delivery System
- Active Video Delivery for a Large-Scale Video Archival and Retrieval System
- Active Video Delivery for a Large-Scale Video Archival and Retrieval System
- Mpeg-7メタデｰタフォｰマットに基づく大規模映像アｰカイブ･配信システム : 教育システム
- Verification Tests Approach Based on "MPEG-7 over Content ID" for the Large Scale Digital Archive
- Development of Content Retrieval Application Using MPEG-7 for Archive Video Materials
- BROADCASTING PROGRAM PRODUCTION SYSTEM BY USING PETA-BYTE CLASS LARGE SCALE ARCHIVE
- Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
- Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
- Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
- Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
- Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
- One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000℃ on GaAs (111) Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy