スポンサーリンク
Sortec Corporation | 論文
- Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
- New Dry Surface-Imaging Process for X-Ray Lithography
- Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
- Freeze-Drying Process to Avoid Resist Pattern Collapse
- X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
- Effect of Helium Gas Pressure on X-Ray Mask Heating during Synchrotron Radiation Exposure
- Wafer Temperature Measurement and X-Ray Mask Temperature Evaluation in Synchrotron Radiation Lithography
- Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
- Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- Performance of X-Ray Stepper for Next-Generation Lithography
- Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma
- Precise Stress Control of Ta Absorber using Low Stress Alumima Etching Mask for X-Ray Mask Fabrication
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth