スポンサーリンク
Sortec Corporation | 論文
- Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
- Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
- Biexciton Luminescence from GaN Epitaxial Layers
- Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
- Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
- Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
- Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
- Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
- Analysis of Deformation of X-Ray Mask Membrane in Aligner Motion
- F-K XANES Studies of Alkali Fluorides
- F-K XANES Studies of Alkaline-Earth Fluorides
- Wet-silylation Process for X-ray and EUV Lithographies
- X-Ray Mask Technology Utilizing an Optical Stepper
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique