スポンサーリンク
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., | 論文
- Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection
- Novel Single-Step Rapid Thermal Oxynitridation Technology for Forming Highly Reliable Electrically Erasable Programmable Read-Only Memory Tunnel Oxide Films
- Kinetics of Rapid Thermal Oxidation of Silicon
- Role of SiN Bond Formed by N_2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO_2 Films
- Optimum Electrode Materials for Ta_2O_5 Capacitors for High- and Low-Temperature Processes
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Effect of W Film Stress on W-Gate MOS Characteristics
- Evaluation of Laser CVD Tungsten for Gete Electrode : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- A Novel Clean Ti Salicide Process Using Grooved Gate Structure
- Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
- 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs
- The Dielectric Reliability of Very Thin SiO_2 Films Grown by Rapid Thermal Processing : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Reduction of Stress in GaAs with In-Doped GaAs Intermediate Layer Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- The Influence of Growth Temperature and Thermal Annealing on the Stress in GaAs Layers Grown on Si Substrates : Condensed Matter
- Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
- Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase Epitaxy