スポンサーリンク
Semiconductor Leading Edge Technologies Inc. | 論文
- Application of Zirconium Silicon Oxide Films to an Attenuated Phase-Shifting Mask in ArF Lithography
- Heterogeneous Particle Formation during Low Pressure Etching of Silicon Dioxide
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- Broad Tuning of Nd:YVO_4 Green Laser by Temperature Control of Intracavity KTiOPO_4
- Blister Formation at Photoresist-Substrate Interface
- Local Peeling of Photoresist Film during Ultraviolet Light Exposure
- Adhesion of Photoresist Pattern Baked at 80 to 325℃ to Inorganic Solid Surface
- High-resolution RBS analysis of Si-dielectrics interfaces
- Photoconductive Plastic Holography Employing White-Light Laser : Optics and Quantum Electronics
- Influence of Electron Density Distribution at the Electron Source in a Projection Exposure System
- An Improved Electron Scattering Simulation at the Mask in a Projection Lithography System
- Plasma Cure Process for Porous SiOCH Films using CF_4 Gas
- Plasma-Enhanced ALD Ru Thin Films on PVD-TaN Films with Smooth Morphology at Low Temperature Using DER Ru Precursor
- Etch-byproduct Pore Sealing for ALD-TaN Deposition on Porous Low-k Film
- Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition(High-κ Gate Dielectrics)
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
- Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
- Extendibility of High Mobility HfSiON Gate Dielectrics