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Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan | 論文
- Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance
- Process-Induced Damage Characterization of Patterned Low-$\kappa$ Film Using Electron Energy Loss Spectroscopy Technique
- Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography
- Fluorinated-Polymer Based High Sensitivity Extreme Ultraviolet Resists
- High-Etching-Selectivity Barrier SiC ($k
- Galvanic Corrosion Control in Chemical Mechanical Polishing of Cu Interconnects with Ruthenium Barrier Metal Film
- Impact of Activation Annealing Temperature on the Performance, Negative Bias Temperature Instability, and Time-to-Dielectric Breakdown Lifetime of High-$k$/Metal Gate Stack p-Type Metal–Oxide–Semiconductor Field Effect Transistors
- Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors
- Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process
- Dual-Metal Gate Technology with Metal-Inserted Full Silicide Stack and Ni-Rich Full Silicide Gate Electrodes Using a Single Ni-Rich Full Silicide Phase for Scaled High-$k$ Complementary Metal–Oxide–Semiconductor Field-Effect Transistors
- Effect of Pattern Layout and Dissolved Oxygen in CO2 Rinse Water on Cu Corrosion during Post-Etch Cleaning
- Suppression of Metamorphoses of Metal/High-$k$ Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors
- Hybrid Electrochemical Mechanical Planarization Process for Cu Dual-Damascene Through-Silicon Via Using Noncontact Electrode Pad
- Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
- Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication
- Reaction Mechanism of Extreme Ultraviolet Resists
- Trench Sidewall Elimination Effect on Line-to-Line Leakage Current in Scalable Porous Silica ($k= 2.1$)/Cu Interconnect Structure
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
- Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation