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Samsung Electronics Co. Ltd. Kyungki‐do Kor | 論文
- Wide-Viewing-Angle Hybrid Aligned Nematic Liquid Crystal Cell Controlled by Complex Electric Field
- Electrooptic Characteristics of the Fringe-Field Switching Device with Electrode on Top Substrate(Optical Properties of Condensed Matter)
- Novel Bonding Technology for Hermetically Sealed Silicon Micropackage
- Emission Characteristics of the Molybdenum-Coated Silicon Field Emitter Array
- Improvement of Electron Emission Stability of Mo-tip FEAs by DLC Coating
- Fabrication and Characterization of Diamond-Like Carbon Coated Knife Edge Field Emitter Array
- Reflective Display Associated With In-Plane Rotation of Nematic Liquid Crystal : Optics and quantum Electronics
- Chiral-Doped Optically Compensated Bend Nematic Liquid Crystal Cell with Continuous Deformation from Twist to Twisted Bend State : Structure and Mechanical and Thermal Properties of Condensed Matter
- Novel Nematic Liquid Crystal Device Associated with Hybrid Alignment Controlled by Fringe Field : Optics and Quantum Electronics
- Electro-Optic Characteristic of Fringe-Field Switching Mode Depending on Rubbing Direction
- Self-Aligned Local Channel Implantation Using Reverse Gate Pattern for Deep Submicron Dynamic Random Access Memory Cell Transistors
- Cell Transistor Design Using Self-Aligned Local Channel Implant(SALCI) for 4Gb DRAMs and Beyond
- Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
- New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
- A Characteristics of Buried Channel Poly-Si TFTs
- In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
- Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
- Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate