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SEMATECH | 論文
- High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility(Session 4A : Channel Engineering)
- High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility(Session 4A : Channel Engineering)
- Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
- Interfacial Layer-Induced Mobility Degradation in High-k Transistors
- Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration
- Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices
- Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices
- Demonstration of Low V_t NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack
- Effect Of Starting Interface in Scalability/Device Performance of Ultra-Scaled ALD HfSiON/TiN Gate Stacks
- NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate Stacks
- Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
- Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
- Transient charging and relaxation in high-k gate dielectrics and its implications
- Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
- Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Plasma Nitridation of HfO_2 Enabling a 0.9nm EOT with High Mobility for a Gate First MOSFET
- Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
- Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFEI
- A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors