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Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University | 論文
- Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model
- Leakage mechanism in GaN and AlGaN Schottky interfaces
- Formation of InP and InGaAs Air-Hole Arrays on InP(111) Substrates by Selective-Area Metal–Organic Vapor Phase Epitaxy
- Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
- Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
- Monte Carlo Simulation of InP/InGaAs Heterojunction Bipolar Transistors Considering Quantum Effects through an Effective Potential : Semiconductors
- Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
- Pulse Compression by Quasi-Steady Propagation along Switch Lines
- Novel Nano-Faceting Structures Grown on Patterned Vicinal(110)GaAs Substrates by Metal-Organic Vapor Phase Epitaxy(MOVPE)
- GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits
- A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator
- Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy
- Simulation of Carrier Transport across Heterojunctions Based on Drift-Diffusion Model Incorporating an Effective Potential : Semiconductors
- Fabrication of InP and InGaAs air-hole type Two-dimensional Photonic Crystals by Selective Area MOVPE
- Lateral Thickness Modulation of InGaAs/GaAs Structures by Selective Area MOVPE
- Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
- Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE
- UV-Induced Variation of Interface Potential in AlOx/n-GaN Structure
- Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers