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Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University | 論文
- GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
- MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
- Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
- Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth
- Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
- Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
- Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
- Theoretical study on the photonic crystal slabs with hexagonal optical atoms
- Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops(Electronic Circuits)
- Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
- Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors
- Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
- Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model