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Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University | 論文
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
- Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism
- Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
- Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures
- Effects of surface oxidation of AlGaN on DC characteristics of AlGaN/GaN high-electron-mobility transistors
- 招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
- Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
- 招待講演 Theoretical study on graphene field-effect transistors (Electron devices)
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Evaluation of Digitally Controlled PLL by Clock-Period Comparison(Analog Circuits and Related SoC Integration Technologies)
- Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
- Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
- Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
- III-V semiconductor hetero-structure nanowires by selective area MOVPE
- Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors