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Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan | 論文
- Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System
- Dissociation Channels of c-C4F8 to CF2 Radical in Reactive Plasma
- Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet
- Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
- Spatial Profile Measurement of SiH3 Radical Flux in SiH4/H2 Microwave Plasma by Modified Appearance Mass Spectrometry
- Spatial Variation of Negative Oxygen Ion Energy Distribution in RF Magnetron Plasma with Oxide Target
- In-situ Time-Resolved Infrared Spectroscopic Study of Silicon-Oxide Surface during Selective Etching over Silicon in Fluorocarbon Plasma
- Modification of Fluorinated Al2O3 Surface by Irradiating H2 and O2 Plasmas
- Enhancement of Crystal Growth in Si Thin-Film Deposition by H-Radical-Assisted Magnetron Sputtering
- Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF into N Downflow Plasma
- Quantum Chemical Investigation for Chemical Dry Etching of SiO by Flowing NF into H Downflow Plasma
- Experimental Study of Stark Effects in Argon High Rydberg States
- Dissociations of C
- Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well
- Dissociations of C₅F₈ and C₅HF₇ in Etching Plasma (Special Issue : Dry Process)