Enhancement of Crystal Growth in Si Thin-Film Deposition by H-Radical-Assisted Magnetron Sputtering
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概要
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We developed a new Si sputtering deposition system with an additional H-radical source, called H-radical-assisted magnetron sputtering (HRAMS). This system enables us to prepare a microcrystalline film even at a low total gas pressure of 3 mTorr and the crystalline volume fraction increased steeply from 41 to 77% with increasing total gas pressure from 3 to 5 mTorr, although a conventional H2/Ar mixture sputtering system prepared an amorphous film at total gas pressures of 5 mTorr and below. In addition, the crystallinity of the films prepared by HRAMS was higher than that by the conventional magnetron sputtering at a H2 partial pressure ratio lower than 10%. These improvements of crystallinity by HRAMS may be attributed to both or one of the following two effects. One is the supply of H atoms produced in the radical source to the film-growing surface, resulting in the enhancement of H coverage on the film-growing surface. The other effect is the enhancement of the generation of SiHx species as deposition precursors by the reactive ion etching (RIE) effect on the Si target surface.
- 2010-01-25
著者
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Sasaki Koichi
Plasma Nanotechnology Research Center Nagoya University
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Fukaya Kota
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
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Sasaki Koichi
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Tabata Akimori
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
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