Mechanism of Hydrogenated Microcrystalline Si Film Deposition by Magnetron Sputtering Employing a Si Target and H2/Ar Gas Mixture

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概要

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• The mechanism of hydrogenated microcrystalline silicon (μc-Si:H) film deposition by magnetron sputtering employing a Si target and H2/Ar gas mixture has been investigated by measuring Si and H atom densities in the gas phase by laser-induced fluorescence spectroscopy. The crystalline volume fraction of the film correlated positively with H atom density. The variation in Si atom density indicated the increase in sputtering yield from the Si target in the H2/Ar discharge. The surface of the Si target immersed in the H2/Ar discharge was hydrogenated. Therefore, it is reasonable to expect the production of SiHx molecules (typically SiH4) from the hydrogenated Si target via reactive ion etching. Since SiHx molecules produced from the target may function as a deposition precursor, the mechanism of μc-Si:H film deposition is considered to be similar to that of plasma-enhanced chemical vapor deposition (PECVD) employing a SiH4/H2 gas mixture. The advantage of magnetron sputtering deposition over PECVD is the production of SiHx molecules without using toxic, explosive SiH4.

• 2009-03-25

著者

• Sasaki Koichi

  Plasma Nanotechnology Research Center Nagoya University

• Tabata Akimori

  Department Of Electrical Engineering Nagoya University

• Fukaya Kota

  Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan

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