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Optoelectronics Technology Research Laboratory (OTL) | 論文
- Step Structures and Terrace Width Ordering of Molecular Beam Epitaxially Grown GaAs Surfaces Observed by Scanning Tunneling Microscopy
- Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
- Direct Observation of Species Liberated from GaAs Native Oxides during Atomic Hydrogen Cleaning
- Current Imaging Tunneling Spectroscopy of Thin n-GaAs/p-GaAs Multilayer Structures in Air
- Observation of Ga_InAs/InP Multiquantum Well Structure in Air by Scanning Tunneling Microscope : Surfaces, Interfaces and Films
- Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces
- Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
- Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces
- Step Structures on Vicinal InAs (001) under (2×4) and (4×2) Surface Reconstructions
- Straight Step Edge Formation on an InAs(001) Vicinal Surface by the Transition of Surface Reconstruction
- Shape Transition of GaAs Islands Grown on InAs (001) Surfaces
- InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface
- GaOH : Unstable Species Liberated from GaAs Surface Oxides during Atomic Hydrogen Cleaning
- Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces
- In Situ Mass Spectrometric Analysis of Surface Chemistry in MOMBE Growth
- GaAs Oxide Removal Using Hydrogen Plasma Studied by Surface Second-Harmonic Generation
- Scattering of Pulsed Trimethylgallium Beam from Clean and Oxidized GaAs Surfaces
- GaAs Heteroepitaxial Growth on an InP (001) Substrate
- Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces