GaAs Oxide Removal Using Hydrogen Plasma Studied by Surface Second-Harmonic Generation

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概要

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• Surface-reflection second-harmonic generation (SHG) was applied to observe the surface-oxide removal of GaAs(001) using a pulsed hydrogen plasma. Real-time observations were carried out to monitor a specific polarization component of SHG. The p-polarized SH intensity under p-polarized excitation increased in the [011] azimuth of incidence and decreased in the [011] azimuth of incidence during hydrogen plasma irradiation while the other component, the p-polarized SH intensity under s-polarized excitation did not change. The input polarization-angle dependence was examined before and after the oxide removal. The variation in the SH intensity during the hydrogen plasma treatment was found to be mainly due to variation in the surface-susceptibility tensor elements. Among these, an "isotropic" tensor element, ∂_<zzz> (or ∂_<ξξz>=∂_<ηηz>, changes most significantly.

• 社団法人応用物理学会の論文
• 1995-03-15

著者

• YAMADA Chikashi

  Optoelectronics Technology Research Laboratory

• KIMURA Takahiro

  Optoelectronics Technology Research Laboratory

• Yamada C

  Optoelectronics Technology Research Laboratory (otl)

• Kimura Takahiro

  Optoelectronics Technology Research Laboratory (otl):(present Address)fujitsu Laboratories Ltd.

関連論文

• A Second-Harmonic Generation Study Applied to Sulfur Passivation and Photochemical Washing of GaAs Surfaces
• Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces
• GaAs Oxide Removal Using Hydrogen Plasma Studied by Surface Second-Harmonic Generation
• In-Situ Surface Second-Harmonic Generation Study of Epitaxial Growth of GaAs

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