In Situ Mass Spectrometric Analysis of Surface Chemistry in MOMBE Growth

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概要

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• The surface chemistry in metalorganic molecular beam epitaxy (MOMBE) growth was studied by observing desorbed species with a mass spectrometer when differently prepared GaAs(100) surfaces were exposed to continuous and pulsed trimethylgallium (TMG) beams. It has been found that TMG decomposition is suppressed on oxidized GaAs surfaces (providing selective-area growth) and also on a GaAs surface having a stable structure (providing stoichiometry dependence of the growth rate). In this paper, we discuss the mechanism of these decomposition suppressions of TMG within the framework of precursor-mediated chemisorption. The suppression of decomposition on a mask surface is interpreted by considering the absence of the deep precursor states, while decomposition suppression on a GaAs surface with a stable structure was found to be due to a high barrier of the precursor states to chemisorption.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Yoshida Seikoh

  Optoelectronics Technology Research Laboratory (otl)

• SASAKI Masahiro

  Optoelectronics Technology Research Laboratory (OTL)

関連論文

• Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces
• In Situ Mass Spectrometric Analysis of Surface Chemistry in MOMBE Growth
• Scattering of Pulsed Trimethylgallium Beam from Clean and Oxidized GaAs Surfaces

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