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Nano-soi Process Laboratory Hanyang University | 論文
- Spectral Analyses on Pad Dependency of Nanotopography Impact on Oxide Chemical Mechanical Polishing : Semiconductors
- Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
- The Stability of Nano Fwned Silica Particles and Its Influence on Chemical Mechanical Planarization for Interlayer Dielectrics
- Effect of Nanotopography on Chemical Mechanical Polishing : Polishing Depth, Pad, Slurry and Interlayer Film Dependencies
- Effect of Nanotopography on Chemical Mechanical Polishing : Polishing Depth, Pad, Slurry and Interlayer Film Dependencies
- Dependency of Precipitation of Interstitial Oxygen on Its Crystal Nature in Czochralski Silicon Wafer
- Spectral Analyses of the Impact of Nanotopography of Silicon Wafers on Oxide Chemical Mechanical Polishing : Semiconductors
- Advanced Czochralski Single Silicon Crystal Growth (特集:21世紀を担うバルク単結晶) -- (シリコン)
- Effect of Alkaline Agent in Colloidal Silica Slurry for Polycrystalline Silicon Chemical Mechanical Polishing
- Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
- Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
- Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
- Effects of the Physical Characteristics of Cerium Oxide on Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
- The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
- Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
- Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
- Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing
- A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
- Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
- Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)