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Nano-soi Process Laboratory Hanyang University | 論文
- Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
- Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
- Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
- Effects of Abrasive Size and Surfactant Concentration on the Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing
- Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
- Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
- Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
- Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
- Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
- The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
- Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
- A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
- Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
- Effect of Slurry Surfactant on Nanotopography Impact in Chemical Mechanical Polishing
- Effects of Physical Characteristics of Cerium Oxide of Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
- Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
- Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
- Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing
- The Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide Chemical Mechanical Polishing : Semiconductors
- Effect of Dispersant Addition during Ceria Abrasive Milling Process on Light Point Defect (LPD) Formation after Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)