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NTT Photonics Laboratories | 論文
- High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection
- 0.5-μm InP HBTによる光通信用60-GS/s D/A変換器
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- A low-power wideband InP-HBT 27-1 PRBS generator
- 光通信ネットワークの大容量化に向けたディジタルコヒーレント信号処理技術の研究開発(総合報告)
- Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- Pit Distribution Design for Computer-Generated Waveguide Holography
- Optical Design for Orthogonal Aperture-Multiplexed Waveguide Holography
- Temperature Coefficients of Refractive Indices of TiO2–SiO2 Films
- Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
- Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta–Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
- Tunable Slow Light of 1.3 μm Region in Quantum Dots at Room Temperature
- InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 μm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer
- Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
- Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization
- Correlation between Fe–Zn Interdiffusion Observed by Scanning Capacitance Microscopy and Device Characteristics of Electro-Absorption Modulators