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NTT Photonics Laboratories | 論文
- 0.5-μm InP HBTによる光通信用60-GS/s D/A変換器(化合物半導体デバイス及び超高周波デバイス/一般)
- Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
- Low-Driving-Voltage Electro-Optic Modulator With Novel KTa1-xNbxO3 Crystal Waveguides
- Novel wavelength tunable filter offering multi-stage selection for colorless, directionless, and contentionless ROADMs
- Spectrally Efficient Frequency-Domain Optical CDM Employing QAM Based on Electrical Spatial Code Spreading
- DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
- Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
- High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems
- Matching-Circuit-Integrated InGaAsP Schottky Barrier Diode for Zero-Biased Operation in the Sub-Millimeter-Wave Range
- In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
- Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
- Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
- Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
- Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector
- Planar Circulator for Sub-Terahertz-Wave Reflection-Geometry Imaging
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術
- 低温プラズマを用いたバイオマテリアルの表面機能化
- Wide dynamic range transimpedance amplifier IC for 100-G DP-QPSK optical links using 1-µm InP HBTs