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Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation | 論文
- Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power Ics
- Failure Analysis and New Design of a Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor Based on Emission Microscopy and 2-Dimensional Device Simulation
- Switching Characteristics of a Thin Film SOI Power MOSFET
- 化学溶液法による(Bi, Nd)_4Ti_3O_ 強誘電体薄膜作製に及ぼすエキシマUV 照射効果
- List Processing on a Data Flow Machine (Mathematical Methods in Software Science and Engineering : Third Conference)
- The Relationship between Corotating Energetic Ion Enhancement and Solar Wind Speed at 1AU
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Variation in Preferred Orientations of TiN Thin Films Prepared by Ion Beam Assisted Deposition
- Consideration of Deformation of TiN Thin Films with Preferred Orientation Prepared by Ion-Beam-Assisted Deposition
- Mechanical Properties of TiN Films with the Preferred Orientations by Nano-Indentation Method
- Joining of Ferrite-Titanate Ceramics by Hot Pressing
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- GaAs Light Emitting Diodes Fabricated on SiO_2/Si Wafers
- Properties of GaAs/Al_Ga_As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
- The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into Silicon