スポンサーリンク
Microelectronics Research Laboratories Nec Corporation | 論文
- C-11-2 垂直電界に関するバルクMOSFETとSOI-MOSFETの比較
- 素子微細化が真性半導体ボディSOI-MOSFETのI_向上効果に与える影響
- 素子微細化が真性半導体ボディSOI-MOSFETのI_向上効果に与える影響
- 真性チャネルSOI-MOSFETのV_ばらつきに対する電界の二次元効果の影響
- ストライプトゲート真性半導体チャネルSOI-MOSFETのしきい値制御に関するシミュレーション
- 科学的機械研磨による層間膜平坦化技術
- Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
- Dependence of Residual Chlorine Amount on Al Grain Size
- Influence of Halogen plasma Atmosphere on SiO_2 Etching Characteristics : Etching
- Influence of Halogen Plasma Atmosphere on SiO_2 Etching Characteristics
- After-Corrosion Suppression Using Low-Temperature Al-Si-Cu Etching
- アクセプタからの電界の二次元的発散を考慮したSOI-MOSFETのしきい値電圧モデル
- 完全空乏化及び部分空乏化型SOI-MOSFETの短チャネル効果に関する容量ネットワークモデルに基づく比較
- SOIMOSFETの基板浮遊効果に及ぼすキャリア消滅の影響についての解析
- Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
- High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
- 3-V Operation Power HBTs for Digital Cellular Phones (Special Issue on Microwave Devices for Mobile Communications)
- Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications (Special Issue on Heterostructure Electron Devices)
- Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs (Special Issue on New Concept Device and Novel Architecture LSIs)
- Fermi Surfaces of Alkali-Metal-Doped C_ Solid