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Memory Research And Development Division Hynix Semiconductor Inc. | 論文
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films
- Thickness Effects on Physical and Ferroelectric Properties of Bi_La_Ti_3O_ (BLT) Films with c-axis-Preferred and Random Orientations
- TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Leakage Current Characteristics of (Ba,Sr) TiO_3 Thin Films Deposited on Ru Electrodes Prepared by Metal Organic Chemical Vapor Deposition
- Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH_3 Gas as Ru Oxidation Suppressing Agent
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- Invited Status and Future of Emerging Nonvolatile Memories (先端デバイスの基礎と応用に関するアジアワークショップ)
- [Invited] Status and Future of Emerging Nonvolatile Memories (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Status and Future of Emerging Nonvolatile Memories
- Status and Future of Emerging Nonvolatile Memories
- Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Pb(Zr_xTi_)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor
- Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Chemical junction delineation of a specific site in Si devices